| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element in which light emission unevenness is reduced.SOLUTION: A semiconductor light emitting element 101 comprises: a semiconductor layer in which an n-type semiconductor layer 121 an a p-type semiconductor layer 123 are laminated; an n-side electrode 130 connected to the n-type semiconductor layer; and a p-side electrode 140 which has a p-side translucent electrode 144 on the p-type semiconductor layer and is connected to the p-side translucent electrode. When viewed from a top face of the semiconductor light emitting element: the p-side electrode has a p-side extension part formed so as to surround the n-side electrode and a p-side pad electrode 142; the n-side electrode has an n-side pad electrode and an n-side first extension part 136 which extends in a direction toward the p-side pad electrode; the p-side extension part includes a p-side first extension part 146 which extends from the p-side pad electrode, a p-side second extension part 147 which extends from the p-side first extension part, a p-side third extension part 148 which is branched off and extends from the p-side second extension part, and a p-side fourth extension part 149 which extends from the p-side third extension part; and the p-side second extension part, the p-side fourth extension part and the n-side first extension part are parallel with each other.SELECTED DRAWING: Figure 1 |
