发明名称 MICRO-LIGHT-EMITTING DIODE
摘要 A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a dielectric layer, and electrodes. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The dielectric layer is disposed on the second type semiconductor layer. The dielectric layer includes openings therein to expose parts of the second type semiconductor layer. The electrodes partially are disposed on the dielectric layer and respectively electrically coupled with the exposed parts of the second type semiconductor layer through the openings of the dielectric layer, in which the electrodes are separated from each other.
申请公布号 US2016104818(A1) 申请公布日期 2016.04.14
申请号 US201414510097 申请日期 2014.10.08
申请人 MIKRO MESA TECHNOLOGY CO., LTD. 发明人 CHANG Pei-Yu
分类号 H01L33/38;H05B33/08;H01L33/00 主分类号 H01L33/38
代理机构 代理人
主权项 1. A micro-light-emitting diode (micro-LED), comprising: a first type semiconductor layer; a second type semiconductor layer disposed on or above the first type semiconductor layer; a dielectric layer disposed on the second type semiconductor layer and the dielectric layer having a plurality of openings therein to expose a plurality of parts of the second type semiconductor layer; and a plurality of electrodes partially disposed on the dielectric layer and respectively electrically coupled with the exposed parts of the second type semiconductor layer through the openings of the dielectric layer, wherein the electrodes are insulated from each other.
地址 APIA WS