发明名称 |
DUAL-STRAINED NANOWIRE AND FINFET DEVICES WITH DIELECTRIC ISOLATION |
摘要 |
A dual-strained Si and SiGe FinFET device with dielectric isolation and a dual-strained nanowire device and methods of forming them are provided. Embodiments include a SiGe SRB formed on a silicon substrate, the SRB having a first region and a second region; a first and a second dielectric isolation layer formed on the first region and on the second region of the SiGe SRB, respectively; a tensile strained Si fin formed on the first dielectric isolation layer; a compressive strained SiGe fin formed on the second dielectric isolation layer; first source/drain regions formed at opposite sides of the tensile strained Si fin; second source/drain regions formed at opposite sides of the compressive strained SiGe fin; a first RMG formed between the first source/drain regions; and a second RMG formed between the second source/drain regions. |
申请公布号 |
US2016104799(A1) |
申请公布日期 |
2016.04.14 |
申请号 |
US201414511715 |
申请日期 |
2014.10.10 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
QI Yi;LABELLE Catherine B.;CAI Xiuyu |
分类号 |
H01L29/78;H01L29/10;H01L29/06;H01L29/66;H01L29/423;H01L21/84;H01L21/762;H01L27/12;H01L29/775 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
a silicon germanium (SiGe) strained relaxed buffer (SRB) formed on a silicon substrate, the SRB having a first region and a second region; a first and a second dielectric isolation layer formed on the first region and on the second region of the SiGe SRB, respectively; a tensile strained Si fin formed on the first dielectric isolation layer; a compressive strained SiGe fin formed on the second dielectric isolation layer; first source/drain regions formed at opposite sides of the tensile strained Si fin; second source/drain regions formed at opposite sides of the compressive strained SiGe fin; a first replacement metal gate (RMG) formed between the first source/drain regions; and a second RMG formed between the second source/drain regions. |
地址 |
Grand Cayman KY |