| 发明名称 |
SILICON CARBIDE DEVICE AND A METHOD FOR FORMING A SILICON CARBIDE DEVICE |
| 摘要 |
A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure. |
| 申请公布号 |
US2016104779(A1) |
申请公布日期 |
2016.04.14 |
| 申请号 |
US201514974553 |
申请日期 |
2015.12.18 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Rupp Roland;Hecht Christian;Konrath Jens;Bergner Wolfgang;Schulze Hans-Joachim;Elpelt Rudolf |
| 分类号 |
H01L29/16;H01L21/04;H01L29/06;H01L21/56;H01L23/31;H01L23/29 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A silicon carbide device comprising:
a silicon carbide substrate, wherein the silicon carbide substrate comprises an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer, wherein the buried lateral silicon carbide edge termination region has a second conductivity type, wherein the buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer comprising the first conductivity type; an inorganic passivation layer structure laterally covering at least partly a main surface of the silicon carbide substrate; and a molding material layer adjacent to the inorganic passivation layer structure. |
| 地址 |
Neubiberg DE |
