摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor which has high carrier mobility and normally-off characteristics.SOLUTION: A field effect transistor comprises: a gate electrode for applying a gate voltage; a source electrode and drain electrode for extracting a current; an active layer which is provided adjacent to the source electrode and drain electrode and composed of an oxide semiconductor; and a gate insulation film provided between the gate electrode and the active layer. The oxide semiconductor contains a spinel compound which contains at least indium and magnesium and contains one or two and more elements of aluminum, gallium, calcium, strontium and barium. |