发明名称 |
METAL NITRIDE MATERIAL FOR THERMISTORS, METHOD FOR PRODUCING SAME, AND FILM-TYPE THERMISTOR SENSOR |
摘要 |
Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V x Al y N z (where 0.70 ‰¤ y/(x+y) ‰¤ 0.98, 0.4 ‰¤ z ‰¤ 0.5, and x+y+z = 1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using a V-Al alloy sputtering target. |
申请公布号 |
EP3007186(A1) |
申请公布日期 |
2016.04.13 |
申请号 |
EP20140808362 |
申请日期 |
2014.05.26 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
FUJITA, TOSHIAKI;TANAKA, HIROSHI;NAGATOMO, NORIAKI |
分类号 |
H01C7/04;C01G31/00;C23C14/06;C23C14/34;C30B29/38;G01K7/22;H01C17/12 |
主分类号 |
H01C7/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|