发明名称 |
Ferroelectric memory cell and methods for manufacture thereof |
摘要 |
The present invention is related to the realization of a simplified bottom electrode stack for high-density ferroelectric memory cells, where the ferroelectric capacitor is positioned directly on top of the contact plug. The ferroelectric layer is formed a low partial oxygen pressure to maintain the bottom electrode in its metallic form. |
申请公布号 |
EP1331661(B1) |
申请公布日期 |
2016.04.13 |
申请号 |
EP20020447217 |
申请日期 |
2002.11.12 |
申请人 |
IMEC;STMICROELECTRONICS N.V. |
发明人 |
WOUTERS, DIRK;EVERAERT, JEAN-LUC;LISONI, JUDIT |
分类号 |
H01L49/02;H01L21/02;H01L21/314;H01L21/316 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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