发明名称 MEMORY ARRAY HAVING CONNECTIONS GOING THROUGH CONTROL GATES
摘要 Some embodiments include apparatuses and methods having a substrate, a memory cell string including a body, a select gate located in a level of the apparatus and along a portion of the body, and control gates located in other levels of the apparatus and along other respective portions of the body. At least one of such apparatuses includes a conductive connection coupling the select gate or one of the control gates to a component (e.g., transistor) in the substrate. The connection can include a portion going through a portion of at least one of the control gates.
申请公布号 EP2891183(A4) 申请公布日期 2016.04.13
申请号 EP20130834123 申请日期 2013.08.29
申请人 MICRON TECHNOLOGY, INC. 发明人 TANZAWA, TORU;MURAKOSHI, TAMOTSU;THIMMEGOWDA,DEEPAK
分类号 H01L27/115;H01L21/8247;H01L29/66;H01L29/792 主分类号 H01L27/115
代理机构 代理人
主权项
地址