发明名称 |
MEMORY ARRAY HAVING CONNECTIONS GOING THROUGH CONTROL GATES |
摘要 |
Some embodiments include apparatuses and methods having a substrate, a memory cell string including a body, a select gate located in a level of the apparatus and along a portion of the body, and control gates located in other levels of the apparatus and along other respective portions of the body. At least one of such apparatuses includes a conductive connection coupling the select gate or one of the control gates to a component (e.g., transistor) in the substrate. The connection can include a portion going through a portion of at least one of the control gates. |
申请公布号 |
EP2891183(A4) |
申请公布日期 |
2016.04.13 |
申请号 |
EP20130834123 |
申请日期 |
2013.08.29 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TANZAWA, TORU;MURAKOSHI, TAMOTSU;THIMMEGOWDA,DEEPAK |
分类号 |
H01L27/115;H01L21/8247;H01L29/66;H01L29/792 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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