发明名称 |
PRODUCTION OF SPACERS AT THE EDGES OF A TRANSISTOR GATE |
摘要 |
The production of spacers at flanks of a transistor gate, including a step of forming a dielectric layer covering the gate and a peripheral region of a layer of semiconductor material surrounding the gate, including forming a superficial layer covering the gate and the peripheral region; partially removing the superficial layer configured so as to completely remove the superficial layer at the peripheral region while preserving a residual part of the superficial layer at the flanks; and selective etching of the dielectric layer vis-à-vis the material of the residual part of the superficial layer and vis-à-vis the semiconductor material. |
申请公布号 |
EP2999001(A3) |
申请公布日期 |
2016.04.13 |
申请号 |
EP20150184982 |
申请日期 |
2015.09.14 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;STMICROELECTRONICS SA;STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
ARVET, CHRISTIAN;BARNOLA, SÉBASTIEN;LAGRASTA, SÉBASTIEN;POSSEME, NICOLAS |
分类号 |
H01L29/78;H01L21/336;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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