| 摘要 |
An electron tube device (100) comprises an electron emitter (10), which is adapted for a release of electrons, an electron collector (20), which is adapted for a collection of the electrons, wherein the electron collector (20) and the electron emitter (10) are spaced from each other by a gap (1), and a gate electrode (30), which is arranged between the electron emitter (10) and the electron collector (20), wherein the gate electrode (30) is adapted for subjecting the electrons in the gap (1) to an electrical potential, wherein the gate electrode (30) comprises at least one membrane-shaped, electrically conductive or semiconductive electrode layer (31), which is at least partially transparent for the electrons, and the at least one electrode layer (31) has at least one of a plurality of through-holes and at least one electron absorption reducing dopant. Furthermore, methods of using the electron tube device (100) are disclosed. |
