发明名称 半導体装置及びその製造方法
摘要 <P>PROBLEM TO BE SOLVED: To improve moisture absorption reflow resistance of an obtained semiconductor device in manufacturing of the semiconductor device having semiconductor chips bonded with a die bonding film. <P>SOLUTION: A semiconductor device manufacturing method comprises in the following order: a process of thermal compression bonding a semiconductor chip 10 with a support member 5 and/or another semiconductor chip 10 via a die bonding film 2; a process of progressing hardening of the die bonding film by heating the die bonding film 2 under a pressure atmosphere 70 of 0.2-0.5 MPa; and a process of encapsulating the semiconductor chips 10 by an encapsulation resin. Melt viscosity of the die bonding film 2 at a temperature that the die bonding film 2 reaches in the process of thermal compression bonding the semiconductor chip is 20000-100000 Pa s and shear viscosity of the die bonding film 2 at a temperature of 100-120&deg;C is 5000 Pa s and under. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5903779(B2) 申请公布日期 2016.04.13
申请号 JP20110126573 申请日期 2011.06.06
申请人 日立化成株式会社 发明人 尾崎 義信;畠山 恵一;丹治 美香;中村 祐樹;宮原 正信
分类号 H01L21/52;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/52
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