摘要 |
<P>PROBLEM TO BE SOLVED: To improve moisture absorption reflow resistance of an obtained semiconductor device in manufacturing of the semiconductor device having semiconductor chips bonded with a die bonding film. <P>SOLUTION: A semiconductor device manufacturing method comprises in the following order: a process of thermal compression bonding a semiconductor chip 10 with a support member 5 and/or another semiconductor chip 10 via a die bonding film 2; a process of progressing hardening of the die bonding film by heating the die bonding film 2 under a pressure atmosphere 70 of 0.2-0.5 MPa; and a process of encapsulating the semiconductor chips 10 by an encapsulation resin. Melt viscosity of the die bonding film 2 at a temperature that the die bonding film 2 reaches in the process of thermal compression bonding the semiconductor chip is 20000-100000 Pa s and shear viscosity of the die bonding film 2 at a temperature of 100-120°C is 5000 Pa s and under. <P>COPYRIGHT: (C)2013,JPO&INPIT |