| 摘要 |
A semiconductor light-emitting device includes a semiconductor laminate containing an n-type layer, a light-emitting layer, and a p-type layer, via holes penetrating the p-type and the light-emitting layers exposing the n-type layer, a p-side electrode extending on the p-type layer and having light reflectivity, which is separated from each of the boundary edges of the p-type layer and the plurality of via holes, an insulating layer which covers via hole side surfaces and extends on the p-type layer, and which extends on the boundary edge portion of the p-side electrode, and n-side electrodes which are electrically connected to the n-type layer at the bottoms of the via holes, which are led above the p-type layer and the p-side electrode with the insulating layer intervening therebetween, which overlap the p-side electrode without gaps, in a plan view, and which have light reflectivity. |
