| 发明名称 | Non-volatile memory device and method for manufacturing same | ||
| 摘要 | According to an embodiment, a non-volatile memory device includes electrodes, an inter-layer insulating film between the electrodes and at least one semiconductor layer extending through the electrodes and the inter-layer insulating film. The device includes a charge storage layer between the semiconductor layer and each electrode, a first insulating film between the charge storage layer and the semiconductor layer, and a second insulating film. The second insulating film includes a first portion between the charge storage layer and each electrode, a second portion between each electrode and the inter-layer insulating film, and a third portion that links the first portion and the second portion. In a cross-section of the third portion parallel to the first direction and a second direction toward each electrode from the charge storage layer, a curved surface on the charge storage layer side has a curvature radius larger than a surface on the electrodes side. | ||
| 申请公布号 | US9312271(B2) | 申请公布日期 | 2016.04.12 |
| 申请号 | US201514597259 | 申请日期 | 2015.01.15 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Sawa Keiichi;Tanaka Masayuki;Natori Katsuaki |
| 分类号 | H01L27/108;H01L29/76;H01L29/94;H01L31/119;H01L27/115;H01L21/28;H01L21/02;H01L29/51;H01L29/423 | 主分类号 | H01L27/108 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner, LLP | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner, LLP |
| 主权项 | 1. A non-volatile memory device, comprising: electrodes arranged in a first direction; an inter-layer insulating film between the electrodes; at least one semiconductor layer extending in the first direction through the electrodes and the inter-layer insulating film; a charge storage layer between the semiconductor layer and each of the electrodes; a first insulating film between the charge storage layer and the semiconductor layer; and a second insulating film including a first portion, a second portion, and a third portion, the first portion being provided between the charge storage layer and each of the electrodes, the second portion being provided between each of the electrodes and the inter-layer insulating film, the third portion linking the first portion and the second portion and having a curved surface on the charge storage layer side, the curved surface on the charge storage layer side having a curvature radius larger than a curvature radius of a surface on the electrodes side in a cross-section of the third portion parallel to the first direction and a second direction toward each of the electrodes from the charge storage layer. | ||
| 地址 | Tokyo JP | ||