Method for etching insulation film

摘要

Disclosed is a method for etching an insulation film of a processing target object. The method includes: in a first term, periodically switching ON and OFF of a high frequency power so as to excite a processing gas containing fluorocarbon and supplied into a processing container of a plasma processing apparatus; and in a second term subsequent to the first term, setting the high frequency power to be continuously turned ON so as to excite the processing gas supplied into the processing container. In one cycle consisting of a term where the high frequency is turned ON and a term where the high frequency power is turned OFF in the first term, the second term is longer than the term where the high frequency power is turned ON.

主权项

1. A method for etching an insulation film of a processing target object that includes a wiring layer, the insulation film formed on the wiring layer, and a mask formed of an organic film on the insulation film, the method comprising:
in a first term, periodically switching ON and OFF of at least one of a first non-DC power and a second non-DC power so as to excite a processing gas containing fluorocarbon and supplied into a processing container of a plasma processing apparatus, a frequency of the first non-DC power being higher than that of the second non-DC power; and in a second term subsequent to the first term, setting the first non-DC power to be continuously turned ON so as to excite the processing gas supplied into the processing container, in which, in one cycle consisting of a term where the first non-DC is turned ON and a term where the first non-DC power is turned OFF in the first term, the second term is longer than the term where the first non-DC power is turned ON, wherein the periodically switching ON and OFF of at least one of the first non-DC power and the second non-DC power, and the setting the first non-DC power to be continuously turned ON are alternately repeated.