Structure with a metal silicide transparent conductive electrode and a method of forming the structure

摘要

Disclosed are embodiments of a structure with a metal silicide transparent conductive electrode, which is commercially viable, robust and safe to use and, thus, optimal for incorporation into devices, such as flat panel displays, touch panels, solar cells, light emitting diodes (LEDs), organic optoelectronic devices, etc. Specifically, the structure can comprise a substrate (e.g., a glass or plastic substrate) and a transparent conducting film on that substrate. The transparent conducting film can comprise a metal silicide nanowire network. For example, in one embodiment, the metal silicide nanowire network can comprise multiple metal silicide nanowires fused together in a disorderly arrangement so that they form a mesh. In another embodiment, the metal silicide nanowire network can comprise multiple metal silicide nanowires patterned so that they form a grid. Also disclosed herein are various different method embodiments for forming such a structure.

主权项

1. A structure comprising:
a substrate; a transparent conducting film on said substrate, said transparent conducting film comprising a metal silicide nanowire network comprising metal silicide nanowires,
said metal silicide nanowires comprising at least some intersecting metal silicide nanowires with interfaces between said intersecting metal silicide nanowires being physically fused together,said metal silicide nanowires comprising multiple types of metal silicide nanowires made from different silicided metal or metal alloy; and a transparent polymer layer coating said metal silicide nanowire network,
said transparent polymer layer comprising a conductive layer.