Method of manufacturing semiconductor device and substrate processing apparatus

摘要

Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: (a) forming a discontinuous first layer including the first element and having a thickness of less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film having a predetermined thickness and a predetermined composition and including a first element and a second element different from the first element, by performing a cycle a plurality of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element into a process vessel accommodating the substrate, wherein the first layer is a discontinuous layer having a thickness of less than one atomic layer, and(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element into the process vessel to modify the first layer under a condition that a modifying reaction of the first layer by the second gas is not saturated.