发明名称 Nonvolatile memory device and method of operating the same
摘要 According to example embodiments, an operation method of a nonvolatile memory device includes determining a location of a selected word line among word lines connected to the nonvolatile memory device, selecting one of a plurality of different read disturbance reducing modes according to the location of the selected word line, and performing a read or verification operation according to the selected read disturbance reducing modes. The nonvolatile memory device includes cell strings. Each one of the cell strings includes memory cells stacked on top of each other in a direction perpendicular to the substrate and between a ground select transistor and a string select transistor. The ground select transistor is between the substrate and the number of the memory cells. The string select transistor is connected to a bit line and is between the bit line and the number of the memory cells.
申请公布号 US9312008(B2) 申请公布日期 2016.04.12
申请号 US201514608760 申请日期 2015.01.29
申请人 Samsung Electronics Co., Ltd. 发明人 Nam Sang-Wan
分类号 G11C16/26;G11C16/04;G11C16/08;G11C16/34 主分类号 G11C16/26
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. An operation method of a nonvolatile memory device, the operation method comprising: determining a location of a selected word line, the selected word line being one of a plurality of word lines connected to a plurality of memory cells in the nonvolatile memory device, the plurality of memory cells being stacked on a substrate in the nonvolatile memory device, the nonvolatile memory device including a plurality of cell strings, each one of the cell strings including a number of the memory cells stacked on top of each other in a direction perpendicular to the substrate and between a ground select transistor and a string select transistor, the ground select transistor between the substrate and the number of the memory cells, the string select transistor connected to a bit line and being between the bit line and the number of the memory cells; selecting one of a plurality of different read disturbance reducing modes according to the location of the selected word line; and performing a read or verification operation according to the selected one of the plurality of different read disturbance reducing modes.
地址 Gyeonggi-do KR