发明名称 Accessing memory cells in parallel in a cross-point array
摘要 Methods and structures for accessing memory cells in parallel in a cross-point array include accessing in parallel a first memory cell disposed between a first selected column and a first selected row and a second memory cell disposed between a second selected column different from the first selected column and a second selected row different from the first selected row. Accessing in parallel includes simultaneously applying access biases between the first selected column and the first selected row and between the second selected column and the second selected row. The accessing in parallel is conducted while the cells are in a thresholded condition or while the cells are in a post-threshold recovery period.
申请公布号 US9312005(B2) 申请公布日期 2016.04.12
申请号 US201314023112 申请日期 2013.09.10
申请人 MICRON TECHNOLOGY, INC. 发明人 Castro Hernan A.
分类号 G11C11/00;G11C13/00;G06F3/06 主分类号 G11C11/00
代理机构 Holland & Hart LLP 代理人 Holland & Hart LLP
主权项 1. A method of accessing memory cells in parallel in a cross-point array comprising: accessing in parallel a first memory cell, disposed between a first selected column and a first selected row, and a second memory cell, disposed between a second selected column different from the first selected column and a second selected row different from the first selected row, wherein accessing in parallel includes writing, erasing or reading by simultaneously applying a first access bias between the first selected column and the first selected row and applying a second access bias between the second selected column and the second selected row.
地址 Boise ID US