Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof

摘要

Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarized process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber has a top portion wider than a bottom portion.

主权项

1. A method of fabricating an extreme ultraviolet photomask, comprising:
providing a mask comprising, in order, a substrate, a reflective layer, and a capping layer; forming an opening having a first portion in the capping layer and a second portion within at least a portion of the reflective layer, wherein the first portion has a width greater than a width of the second portion; forming an absorber layer in the opening and over a top surface of the capping layer; and removing at least a portion of the absorber layer, while leaving another portion of the absorber layer to form an absorber.