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发明名称
SPUTTERING TARGET OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
摘要
인듐(In), 및 가돌리늄(Gd), 디스프로슘(Dy), 홀뮴(Ho), 에르븀(Er) 및 이테르븀(Yb)으로부터 선택되는 원소를 적어도 1종 이상을 포함하는 산화물의 소결체로 이루어지는 스퍼터링 타겟으로서, 상기 산화물의 소결체가 실질적으로 빅스바이트(bixbyite) 구조로 이루어지는 스퍼터링 타겟.
申请公布号
KR101612130(B1)
申请公布日期
2016.04.12
申请号
KR20097021643
申请日期
2008.02.28
申请人
이데미쓰 고산 가부시키가이샤
发明人
이노우에 가즈요시;야노 고키;가사미 마사시
分类号
C23C14/08;C23C14/34;H01L29/786
主分类号
C23C14/08
代理机构
代理人
主权项
地址
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