Flip chip package structure and wafer level package structure

摘要

A flip chip package structure includes a package base and a LED chip. The package base includes a first substrate, a first and a second electrodes disposed on the first substrate and a bonding layer disposed on the first substrate. The LED chip is flipped on the package base and includes an epitaxy layer, a third and a fourth electrodes disposed on the epitaxy layer and contacting the first and the second electrodes, a second insulating layer disposed between the third and the fourth electrodes, and a plurality of bonding pillars disposed on the second insulating layer and contacting the bonding layer. A minimum interval between the bonding layer, the first and the second electrodes and a minimum interval between the bonding pillars, the second and the third electrodes are larger than a width of each bonding pillar.

主权项

1. A flip chip package structure, comprising:
a package base, comprising:
a first substrate;a first electrode, disposed on a part of the first substrate;a second electrode, disposed on a part of the first substrate and kept a distance from the first electrode; anda bonding layer, disposed on a part of the first substrate; and a light emitting diode chip, flipped on the package base and electrically connected with the package base, wherein the light emitting diode chip comprises:
an epitaxy layer;a third electrode, disposed on a part of the epitaxy layer and contacting the first electrode;a fourth electrode, disposed on a part of the epitaxy layer and contacting the second electrode, wherein the fourth electrode is kept a distance from the third electrode;at least one second insulating layer, disposed on a part of the epitaxy layer and located between the third electrode and the fourth electrode; anda plurality of bonding pillars, disposed on the at least one second insulating layer, at least a part of the bonding pillars contacting the bonding layer, wherein:a minimum interval between the bonding layer and the first electrode and a minimum interval between the bonding layer and the second electrode are greater than a width of each of the bonding pillars, and a minimum interval between the bonding pillars and the third electrode and a minimum interval between the bonding pillars and the fourth electrode are greater than the width of each of the bonding pillars.