Methods for fabricating integrated circuits with improved implantation processes

摘要

Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a structure having an n-channel gate stack and a p-channel gate stack formed over a semiconductor substrate. The method includes forming halo implant regions in the semiconductor substrate adjacent the p-channel gate stack and forming extension implant regions in the semiconductor substrate adjacent the p-channel gate stack. The method further includes annealing the halo implant regions and the extension implant regions in the semiconductor substrate adjacent the p-channel gate stack by performing a laser anneal process. Also, the method forms extension implant regions in the semiconductor substrate adjacent the n-channel gate stack.

主权项

1. A method for fabricating an integrated circuit, the method comprising:
providing a semiconductor substrate with first gates overlying second conductive type regions in the semiconductor substrate and second gates overlying first conductive type regions in the semiconductor substrate; performing a first ion implantation to form halo implant regions in the semiconductor substrate adjacent selected second gates; after performing the first ion implantation, performing a second ion implantation to form halo implant regions in the semiconductor substrate adjacent selected first gates; after performing the second ion implantation, performing a third ion implantation to form extension implant regions in the semiconductor substrate adjacent the selected first gates; and after performing the third ion implantation, performing a fourth ion implantation to form extension implant regions in the semiconductor substrate adjacent the selected second gates.