Conformal nitridation of one or more fin-type transistor layers

摘要

Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.

主权项

1. A method comprising:
fabricating a fin-type transistor structure, the fabricating comprising: forming at least one material layer disposed conformally over a fin extending above a substrate, the at least one material layer comprising a gate dielectric layer with an exposed surface; and performing a conformal nitridation process on the exposed surface of the pre-formed gate dielectric layer, the conformal nitridation process forming an exposed, conformal nitrided surface with an increased nitrogen concentration as compared to an underlying portion of the gate dielectric layer.