| 发明名称 | Method for processing an oxygen containing semiconductor body | ||
| 摘要 | A method for processing a semiconductor body is disclosed. In an embodiment, the method includes reducing an oxygen concentration in a silicon wafer in a first region adjoining a first surface of the silicon wafer by a first heat treatment, creating vacancies in a crystal lattice of the wafer at least in a second region adjoining the first region by implanting particles via the first surface into the wafer and forming oxygen precipitates in the second region by a second heat treatment. | ||
| 申请公布号 | US9312120(B2) | 申请公布日期 | 2016.04.12 |
| 申请号 | US201414473890 | 申请日期 | 2014.08.29 |
| 申请人 | Infineon Technologies AG | 发明人 | Schulze Hans-Joachim;Oefner Helmut |
| 分类号 | H01L21/02;H01L21/324;H01L21/265;H01L29/16;H01L29/36;H01L21/66 | 主分类号 | H01L21/02 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method, comprising: reducing an oxygen concentration in a silicon wafer in a first region adjoining a first surface of the silicon wafer by a first heat treatment; creating vacancies in a crystal lattice of the wafer at least in a second region adjoining the first region by implanting particles via the first surface into the wafer; and forming oxygen precipitates in the second region by a second heat treatment. | ||
| 地址 | Neubiberg DE | ||