Semiconductor storage device having resistance-change storage elements

摘要

A semiconductor storage device according to an embodiment includes a plurality of resistance-change storage elements. A plurality of bit lines are connected to the storage elements, respectively. A voltage control circuit controls a decreasing rate of an absolute value of a voltage of a selected bit line among the bit lines when data is written to one of the storage elements.

主权项

1. A semiconductor storage device comprising:
a plurality of resistance-change storage elements; a plurality of bit lines connected to the storage elements, respectively; and a voltage control circuit controlling a decreasing rate of an absolute value of a voltage of a selected bit line among the bit lines when data is written to one of the storage elements, wherein the voltage control circuit comprises: a plurality of current supply paths supplying a current to the selected bit line when data is written to one of the storage elements; and a plurality of current control switches between the current supply paths corresponding thereto, respectively, and the selected bit line, wherein the current supply paths are disconnected from the selected bit line by the current control switches, respectively, in time series when an absolute value of a voltage of the selected bit line is to be decreased after being increased in a data write operation.