MULTILAYERED MAGNETIC THIN FILM STACK AND NONVOLATILE MEMORY DEVICE HAVING THE SAME

摘要

The present invention relates to a nonvolatile magnetic memory device using magnetic tunneling junction (MTJ). According to an embodiment of the present invention, a multi-layer magnetic thin film stack includes: a tunneling barrier layer; a magnetic fixture layer formed on a first surface of the tunneling barrier layer; and a free magnetic layer which is formed on a second surface opposite to the first surface of the tunneling barrier layer. At least one of the magnetic fixture layer and the free magnetic layer includes a FeZr alloy layer and a first magnetic layer having the (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer.