SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

A semiconductor according to the present invention includes: a first gate structure and a second gate structure which extend in a first direction and are spaced apart from each other in a second direction crossing the first direction; a dummy gate structure provided between the first and second gate structures and extending in the first direction; a first source/drain region between the first gate structure and the dummy gate structure; a second source/drain region between the second gate structure and the dummy gate structure; a connecting contact provided on the dummy gate structure and extending in the second direction to connect the first and second source/drain regions; and a common conductive line provided on the connecting contact and applying a voltage to the first and second source/drain regions through the connecting contact.