| 摘要 |
An objective of the present invention is to provide a reliable semiconductor device that has a thin film transistor which has stable electrical characteristics. Another objective of the present invention is to manufacture a reliable semiconductor device at a low cost and at a high level of productivity. In the semiconductor device that has the thin film transistor, a semiconductor layer of the thin film transistor is an oxide semiconductor layer to which a metallic element is added. As the metallic element, at least one metallic element is used among iron, nickel, cobalt, copper, gold, molybdenum, tungsten, niobium, and tantalum. In addition, the oxide semiconductor layer contains indium, gallium, and zinc. |
