| 摘要 |
According to an embodiment of the present invention, a semiconductor memory device comprises: a memory cell array including a plurality of normal memory cells, a selection transistor, and a dummy memory cell; a voltage generator for generating program voltage to be applied to a selected normal memory cell, and dummy word line voltage to be applied to the dummy memory cell when operating a program; and a control logic for controlling the voltage generator to control the dummy word line voltage according to the program voltage. |
