Nitride light emitting diode and fabrication method thereof

摘要

An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., InxAlyGa1-x-yN) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature H2 in-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.

主权项

1. A nitride light emitting diode, comprising an N-type conductive layer, a P-type conductive layer, and a light-emitting layer between the N-type conductive layer and the P-type conductive layer; a current modulation layer in at least one of the N-type conductive layer or the P-type conductive layer and comprising a nitride insulation material layer with opening structures, wherein the opening structure is configured for current conduction and is etched by injecting H2 into an epitaxial growth reacting furnace; and wherein the opening structures of the current modulation layer have a random and discrete distribution.