| 发明名称 | Magnetically refrigerating magnetic material, magnetic refrigeration apparatus, and magnetic refrigeration system | ||
| 摘要 | There are provided a magnetic material for magnetic refrigeration improving a magnetic refrigeration efficiency by including a wide operation temperature range and a magnetic refrigeration apparatus and a magnetic refrigeration system using the magnetic material. The magnetically refrigerating magnetic material is formed of a magnetic material shown by a composition formula of Gd100-x-yZrxYy, wherein 0<x<3.4 as well as 0≦y≦13.5, and the magnetic refrigeration apparatus and the magnetic refrigeration system uses the magnetic material. It is preferable that the magnetic material be approximately spherical magnetic particles having a maximum diameter of 0.3 mm or more to 2 mm or less. | ||
| 申请公布号 | US9310108(B2) | 申请公布日期 | 2016.04.12 |
| 申请号 | US200912552757 | 申请日期 | 2009.09.02 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Kaji Shiori;Saito Akiko;Kobayashi Tadahiko |
| 分类号 | F25B21/00;F25B21/02;H01F1/01 | 主分类号 | F25B21/00 |
| 代理机构 | Amin, Turocy & Watson, LLP | 代理人 | Amin, Turocy & Watson, LLP |
| 主权项 | 1. A magnetic refrigeration apparatus comprising: an AMR bed filled with a first magnetic material; a magnetic field generation device configured to apply and remove a magnetic field to and from the first magnetic material; a low temperature side heat exchanging unit configured to receive coldness from the AMR bed; a high temperature side heat exchanging unit configured to receive heat from the AMR bed; a heat transfer fluid path formed by connecting the AMR bed, the low temperature side heat exchanging unit, and the high temperature side heat exchanging unit for circulating a heat transfer fluid, wherein at least a part of the first magnetic material is formed of a magnetic material shown by a composition formula of Gd100-x-yZrxYy, wherein 0<x<3.4 and 0≦y≦13.5, and wherein the AMR bed has a low temperature end side and a high temperature end side, the low temperature side heat exchanging unit is disposed to the low temperature end side, the high temperature side heat exchanging unit is disposed to the high temperature end side, the low temperature end side is filled with the first magnetic material, and the high temperature end side is filled with a second magnetic material having a ferromagnetic transition temperature higher than that of the first magnetic material. | ||
| 地址 | Tokyo JP | ||