发明名称 |
Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method |
摘要 |
A crystallographically textured metallic substrate includes surfaces for connection and for receiving a thin layer deposit, and is made up of an alloy presenting a cubic crystalline system with centered faces and a predominantly cubic crystallographic texture {100}<001>, the receiving surface including grains mainly presenting crystallographic planes {100} parallel to the receiving surface. The alloy is iron-nickel with weight % relative to total weight: Ni≧30%, Cu≦15%, Cr≦15%, Co≦12%, Mn≦5%, S<0.0007%, P<0.003%, B<0.0005%, Pb<0.0001%, and in the alloy: 34%≦(Ni+Cr+Cu/2+Co/2+Mn). The alloy includes up to 1% in weight of one or several deoxidizing elements chosen among silicon, magnesium, aluminium and calcium, the rest of the elements in the alloy being iron and impurities. |
申请公布号 |
US9309592(B2) |
申请公布日期 |
2016.04.12 |
申请号 |
US200812675449 |
申请日期 |
2008.08.28 |
申请人 |
ARCELORMITTAL-STAINLESS AND NICKEL ALLOYS;ECOLE POLYTECHNIQUE |
发明人 |
Reyal Jean-Pierre;Reydet Pierre-Louis;Roca Cabarrocas Pere;Djeridane Yassine |
分类号 |
H01L31/05;H01L31/18;C23C16/24;C22C38/08;C23C16/02;H01L31/0236;H01L31/0392;C30B25/00 |
主分类号 |
H01L31/05 |
代理机构 |
Young & Thompson |
代理人 |
Young & Thompson |
主权项 |
1. A crystallographically textured device comprising:
a crystallographically textured metallic substrate comprising a connection surface and a surface intended to receive a thin layer deposit; a thin polycrystalline silicon-based layer deposited on said surface intended to receive a thin layer deposit, the thin polycrystalline silicon based layer having a crystallographic orientation (100) and (111), the crystallographically textured metallic substrate being made up of an alloy having a cubic crystalline system with centred faces and a predominantly cubic crystallographic texture (100) <001>, the surface intended to receive a thin layer deposit of the crystallographically textured metallic substrate including grains mainly presenting crystallographic planes (100) parallel to the surface intended to receive a thin layer deposit, and having a roughness of Ra less than 150 nm, wherein the alloy is an iron-nickel alloy that comprises, as a % of weight relative to the total weight of the alloy: Ni ≧30%, Cu ≦15%, Cr ≦15%, Co ≦12%, Mn ≦5%, S <0.0007%, P <0.003%, B <0.0005%, Pb <0.0001%, the percentages in nickel, chromium, copper, cobalt and manganese are such that the alloy satisfies the following condition:
34%≦(Ni+Cr+Cu/2+Co/2+Mn)≦54%, up to 1% of at least one deoxidizing element elected from the group consisting of silicon, magnesium, aluminium and calcium, the balance being iron and impurities, wherein the impurities ≦1% , and the average expansion coefficient of the alloy, α20100, between 20° C. and 100° C., being greater than 10−6 K−1. |
地址 |
Saint-Denis FR |