Semiconductor optical amplifier

摘要

A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

主权项

1. A semiconductor optical amplifier comprising:
a laminated structure including (i) a first compound semiconductor layer that has a first conductivity type and is composed of GaN compound semiconductor, (ii) a second compound semiconductor layer that has a second conductivity type different from the first conductivity type and is composed of GaN compound semiconductor, and (iii) a third compound semiconductor layer that has a light amplification region composed of GaN compound semiconductor, the first compound semiconductor layer, the third compound semiconductor layer, and the second compound semiconductor layer being sequentially layered; a second electrode on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer, wherein,
the laminated structure has a ridge stripe structure,when a width of the ridge stripe structure in a light output end face is Wout, and a width of the ridge stripe structure in a light incident end face is Win, Wout>Win is satisfied, anda carrier non-injection region is provided in the laminated structure, the carrier non-injection region extending from the light output end face of the ridge stripe structure and towards the light incident end face of the ridge stripe structure along an axis line of the semiconductor optical amplifier, the first, second, and third compound semiconductor layers being present in the carrier non-injection region, and the second electrode not being present in the carrier non-injection region.