发明名称 |
Self-aligned contacts for vertical field effect transistors |
摘要 |
Semiconductor devices having vertical field effect transistors with self-aligned source and drain contacts are provided, as well as methods for fabricating vertical field effect transistors with self-aligned source and drain contacts. |
申请公布号 |
US9312383(B1) |
申请公布日期 |
2016.04.12 |
申请号 |
US201514824542 |
申请日期 |
2015.08.12 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Haensch Wilfried Ernst-August;Khakifirooz Ali;Shahrjerdi Davood |
分类号 |
H01L29/66;H01L29/78;H01L21/768;H01L29/06;H01L29/417;H01L21/02;H01L21/311;H01L21/84;H01L27/12 |
主分类号 |
H01L29/66 |
代理机构 |
Ryan, Mason & Lewis, LLP |
代理人 |
Percello Louis J.;Ryan, Mason & Lewis, LLP |
主权项 |
1. A method of forming a semiconductor device, comprising:
patterning a semiconductor structure from an active semiconductor layer of a substrate, the patterned semiconductor structure comprising a planar semiconductor slab, and first and second semiconductor fins vertically extending from the planar semiconductor slab; forming a first insulating spacer to cover the planar semiconductor slab; forming a first gate structure around a lower portion of the first semiconductor fin and a second gate structure around a lower portion of the second semiconductor fin; forming a second insulating spacer which covers a least a portion of the first and second gate structures surrounding the first and second semiconductor fins, and which fills a space between the first and second gate structures; forming first and second source/drain structures on exposed portions of the first and second semiconductor fins extending from the second insulating spacer; forming a third source/drain structure on an exposed portion of the planar semiconductor slab adjacent the first and second insulating spacers; forming a pre-metal dielectric layer over the substrate; and forming first and second conductive via contacts in the pre-metal dielectric layer, wherein the first conductive via contact is formed self-aligned to the first and second source/drain structures, and wherein the second conductive via contact is formed self-aligned to the third source/drain structure. |
地址 |
Armonk NY US |