Semiconductor device with multiple space-charge control electrodes

摘要

A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.

主权项

1. A circuit comprising:
a semiconductor device including:
a semiconductor structure including: a substrate; a barrier layer; an active layer located between the substrate and the barrier layer; a channel formed at a junction of the active layer and the barrier layer; and a buffer layer located between the substrate and the active layer, wherein a conductivity type of the buffer layer is opposite a conductivity of the channel;a first terminal and a second terminal, wherein the first terminal and the second terminal are both located on a first side of the active layer; anda plurality of space-charge control electrodes spaced entirely between the first terminal and the second terminal on a surface of the semiconductor structure, wherein an individual bias voltage is supplied to each of the plurality of space-charge control electrodes, wherein the bias voltage for each of the plurality of space-charge control electrodes is selected based on a bias voltage of the first terminal, a bias voltage of the second terminal, and a location of the space-charge control electrode relative to the first terminal and the second terminal.