| 发明名称 | Power supply protection system | ||
| 摘要 | A power supply protection system including a first metal oxide field effect transistor (MOSFET) having a first source, a first drain coupled to an input node, and a first gate; a second MOSFET having a second source coupled to the first source, a second drain coupled to an output node and a second gate coupled to the first gate, whereby the first MOSFET and the second MOSFET are coupled back-to-back; a zener diode coupled between the first and second sources and the first and second gates; and charge pump circuitry coupled across the zener diode, whereby a voltage on the first and second gates is boosted with respect to the voltage on the first and second sources. | ||
| 申请公布号 | US9312688(B1) | 申请公布日期 | 2016.04.12 |
| 申请号 | US201313931601 | 申请日期 | 2013.06.28 |
| 申请人 | Maxim Integrated Products, Inc. | 发明人 | Farina Marco;Ranzato Mauro;Mariano Gianluca |
| 分类号 | H02H7/00;H02H7/20;H02J7/00 | 主分类号 | H02H7/00 |
| 代理机构 | TIPS Group | 代理人 | TIPS Group |
| 主权项 | 1. A power supply protection system comprising: a first metal oxide field effect transistor (MOSFET) having a first source, a first drain coupled to an input node, and a first gate; a second MOSFET having a second source coupled to the first source, a second drain coupled to an output node and a second gate coupled to the first gate, whereby the first MOSFET and the second MOSFET are coupled back-to-back; a zener diode coupled between the first and second sources and the first and second gates; charge pump circuitry coupled across the zener diode, whereby a voltage on the first and second gates is boosted with respect to the voltage on the first and second sources; and a first protection circuit coupled between the charge pump circuitry and the first and second gates and a second protection circuit coupled between the charge pump circuitry and the first and second sources. | ||
| 地址 | San Jose CA US | ||