发明名称 |
Formation of isolation surrounding well implantation |
摘要 |
Embodiments of present invention provide a method of making well isolations. The method includes forming a hard-mask layer on top of said substrate; forming a first resist-mask on top of a first portion of the hard-mask layer and applying the first resist-mask in forming a first type of wells in a first region of the substrate; forming a second resist-mask on top of a second portion of the hard-mask layer and applying the second resist-mask in forming a second type of wells in a second region of the substrate; applying the first and second resist-masks in transforming the hard-mask layer into a hard-mask, the hard-mask having openings aligned to areas overlapped by the first and second regions of the substrate; etching at least the areas of the substrate in creating deep trenches that separate the first and second types of wells; and filling the deep trenches with insulating materials. |
申请公布号 |
US9312143(B1) |
申请公布日期 |
2016.04.12 |
申请号 |
US201414551672 |
申请日期 |
2014.11.24 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Ponoth Shom;Standaert Theodorus;Yamashita Tenko |
分类号 |
H01L21/027;H01L21/308;H01L21/306;H01L21/762;H01L21/3115;H01L21/266 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
Kelly L. Jeffrey;Meyers Steven |
主权项 |
1. A method comprising:
providing a semiconductor substrate; forming a hard-mask layer on top of the substrate; forming a first resist-mask on top of a first portion of the hard-mask layer etching a top portion of the hard-mask layer in areas not covered by the first resist-mask to create a recessed portion of the hard-mask layer; applying the first resist-mask in forming a first type of wells in a first region of the substrate; forming a second resist-mask on top of a second portion of the hard-mask layer wherein a first portion of the recessed portion of the hard-mask layer is covered by the second resist-mask; etching a second portion of the recessed portion of the hard-mask layer that is not covered by the second resist-mask until the substrate is exposed; applying the second resist-mask in forming a second type of wells in a second region of the substrate; etching at least the exposed portion of the substrate to create deep trenches that separate the first type of wells from the second types of wells; and filling the deep trenches with insulating materials. |
地址 |
Armonk NY US |