发明名称 Word line supply voltage generator for a memory device and method therefore
摘要 A word line supply voltage generator is selectively activated and deactivated to allow internal memory operations that are sensitive to variations on word line voltages to be performed with a stable word line voltage. Techniques for deactivating and reactivating the voltage generator are also disclosed that enable more rapid recovery from deactivation such that subsequent operations can be commenced sooner.
申请公布号 US9311980(B1) 申请公布日期 2016.04.12
申请号 US201314052223 申请日期 2013.10.11
申请人 Everspin Technologies, Inc. 发明人 Gogl Dietmar;Alam Syed M.;Andre Thomas;Lin Halbert S.
分类号 G11C11/00;G11C11/16 主分类号 G11C11/00
代理机构 代理人
主权项 1. A method of providing a word line voltage on a word line in a memory device, comprising: generating a word line supply voltage at a node using a voltage generator, wherein magnitude of the word line supply voltage is greater than that of a logic supply voltage for the memory device; detecting a signal transition signaling a beginning of an operation in the memory device that is sensitive to variations of the word line voltage; driving the word line to the word line voltage using the word line supply voltage at the node; while driving the word line using the word line supply voltage at the node, performing the operation in the memory device that is sensitive to variations of the word line voltage; while performing the operation, and in response to detecting the signal transition signaling the beginning of the operation, maintaining the voltage generator in a deactivated state; determining that the operation sensitive to variations of the word line voltage is complete; and reactivating the voltage generator in response to a determination that the operation sensitive to variations of the word line voltage is complete.
地址 Chandler AZ US