P-contact with more uniform injection and lower optical loss

摘要

The current distribution across the p-layer (130) of a semiconductor device is modified by purposely inhibiting current flow through the p-layer (130) in regions (310) adjacent to the guardsheet (150), without reducing the optical reflectivity of any part of the device. This current flow may be inhibited by increasing the resistance of the p-layer that is coupled to the p-contact (140) along the edges and in the corners of contact area. In an example embodiment, the high-resistance region (130) is produced by a shallow dose of hydrogen-ion (H+) implant after the p-contact (140) is created. Similarly, a resistive coating may be applied in select regions between the p-contact and the p-layer.

主权项

1. A method, comprising:
creating a light emitting element comprising an active region between an n-layer and a p-layer; providing a p-contact to the p-layer, the p-contact being coupled to the p-layer so as to provide a non-uniform current flow from the p-contact to the p-layer; providing a p-pad coupled to the p-contact to facilitate coupling to an external source of power; and providing an n-pad coupled to the n-layer to facilitate coupling to the external source of power, wherein:
the non-uniform current flow is provided by creating at least one current-inhibiting region of the p-contact; andthe method includes implanting ions in the p-layer to create the at least one current-inhibiting region.