Thin-film transistor, method of manufacturing the same, and method of manufacturing backplane for flat panel display

摘要

Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

主权项

1. A method of manufacturing a thin-film transistor (TFT), the method comprising:
forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer, the plasma treatment using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer and over portions of the oxide semiconductor layer; wherein the forming an insulating layer comprises forming the insulating layer by a sol-gel process using a solution comprising hafnium chloride (HfCl4) dissolved in a solvent that includes at least one of acetonitrile and ethylene glycol.