Semiconductor device, method for fabricating the same, and memory system including the semiconductor device

摘要

Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

主权项

1. A semiconductor device, comprising:
an interlayer insulating layer formed on a substrate and including a trench; a gate electrode formed in the trench and including a first metal layer and a second metal layer, the first metal layer formed along a side and a bottom surface of the trench and the second metal layer filling a space formed by the first metal layer; a gate dielectric film formed between the substrate and the gate electrode; a first gate spacer including silicon nitride formed on the sidewall of the gate electrode and the gate dielectric film; a second gate spacer formed on the first gate spacer and having a dielectric constant lower than the dielectric constant of silicon nitride; a third spacer formed on the second gate spacer; and an elevated source/drain formed in a recess formed in the substrate and including SiGe, wherein the first gate spacer directly contacts the gate dielectric film, and a top surface of the elevated source/drain is higher than a top surface of the gate dielectric film under the gate electrode.