发明名称 |
Semiconductor structure and fabrication method thereof |
摘要 |
A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacent to the gate structure, a doped epitaxial material filling up the recess, a cap layer including an undoped epitaxial material and disposed on the doped epitaxial material, a lightly doped drain disposed below the cap layer and sandwiched between the doped epitaxial material and the cap layer, and a silicide disposed on the cap layer and covering the doped epitaxial material to cover the cap layer together with the outer spacer without directly contacting the lightly doped drain. |
申请公布号 |
US9312359(B2) |
申请公布日期 |
2016.04.12 |
申请号 |
US201514821815 |
申请日期 |
2015.08.10 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Wei Ming-Te;Huang Shin-Chuan;Hung Yu-Hsiang;Tsao Po-Chao;Liang Chia-Jui;Chen Ming-Tsung;Liang Chia-Wen |
分类号 |
H01L29/66;H01L29/78;H01L29/165 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A method for forming a semiconductor structure, comprising:
providing a substrate with a gate structure disposed on said substrate and with at least one recess disposed in said substrate and adjacent to said gate structure; forming a doped epitaxial material layer filling up said at least one recess; performing a doping step to form a lightly doped drain region disposed within said doped epitaxial material and at a top of said doped epitaxial material layer; forming a cap layer comprising an undoped epitaxial material, disposed on said lightly doped drain region and covering said lightly doped drain region; forming an outer spacer surrounding said gate structure and standing astride said cap layer, wherein said outer spacer partially covers said cap layer; after forming said outer spacer, performing a heavily doping step to form a source/drain region in said cap layer and in said doped epitaxial material layer; and forming an interlayer dielectric layer to cover said cap layer and said gate structure. |
地址 |
Science-Based Industrial Park, Hsin-Chu TW |