Light emitting device having insulator between pixel electrodes and auxiliary wiring in contact with the insulator

摘要

To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.

主权项

1. A semiconductor device comprising:
a semiconductor layer over an insulating surface; a conductive layer electrically connected to the semiconductor layer; a first insulating layer over the conductive layer; a pixel electrode on the first insulating layer, the pixel electrode electrically connected to the conductive layer through a contact hole in the first insulating layer; a second insulating layer over the first insulating layer, the second insulating layer overlapping an end portion of the pixel electrode; an EL layer over the pixel electrode; a second electrode over the EL layer; an auxiliary wiring between the first insulating layer and the second electrode; and a light-shielding layer over the second electrode, wherein the auxiliary wiring is in contact with the second insulating layer, wherein the EL layer does not overlap the pixel electrode in a region, wherein the auxiliary wiring is in contact with the second electrode in the region, and wherein the light-shielding layer overlaps the auxiliary wiring.