Solid-state imaging device and method for manufacturing solid-state imaging device, and electronic device

摘要

A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.

主权项

1. An imaging device comprising:
a substrate; a semiconductor well region on the substrate which in plan view has a pixel region and a transistorregion;
a plurality of pixels in the pixel region, the plurality of pixels including a first set of pixels that share a first floating diffusion region and a second set of pixels that share a second floating diffusion region; a plurality of transistors in the transistor region, the plurality of transistors including a first set of transistors that are shared by the first set of pixels and a second set of transistors that are shared by the second set of pixels; an element isolation region in the transistor region including a shallow trench isolation (STI) structure; and a well contact region in the transistor region, the well contact region being structured to apply a voltage to the semiconductor region, wherein, the first set of pixels and the second set of pixels neighbor along a horizontal direction, the pixel region and the transistor region neighbor along a vertical direction, the first set of transistors include at least a first amplification transistor, the second set of transistors include at least a second amplification transistor, the well contact region is between the first amplification transistor and the second amplification transistor along the horizontal direction; wherein the plurality of pixels further include a third set of pixels that share a third floating diffusion region, wherein the third set of pixels is adjacent to the first set of pixels across the first set of transistors along the vertical direction.