| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor. | ||
| 申请公布号 | US9312257(B2) | 申请公布日期 | 2016.04.12 |
| 申请号 | US201313768753 | 申请日期 | 2013.02.15 |
| 申请人 | Semiconductor Energy Laboratory Co., Ltd. | 发明人 | Yamazaki Shunpei;Yoshizumi Kensuke |
| 分类号 | H01L27/04;H01L27/12;H01L27/108;H01L29/24;G11C16/10;H01L21/84;H01L27/115 | 主分类号 | H01L27/04 |
| 代理机构 | Fish & Richardson P.C. | 代理人 | Fish & Richardson P.C. |
| 主权项 | 1. A semiconductor device comprising: a first transistor comprising a first semiconductor layer; and a second transistor being over and overlapping with the first transistor, wherein a channel length direction between source and drain regions of the second transistor is perpendicular to an upper surface of the first semiconductor layer. | ||
| 地址 | Atsugi-shi, Kanagawa-ken JP | ||