Methods of forming parallel wires of different metal materials through double patterning and fill techniques

摘要

An integrated circuit and a method of forming an integrated circuit including a first dielectric layer including a surface, a plurality of first trenches defined in the dielectric layer surface, and a plurality of first wires, wherein each of the first wires are formed in each of the first trenches. The integrated circuit also includes a plurality of second trenches defined in the dielectric layer surface, and a plurality of second wires, wherein each of the second wires are formed in each of the second trenches. Further, the first wires comprise a first material having a first bulk resistivity and the second wires comprise a second material having a second bulk resistivity, wherein the first bulk resistivity and the second bulk resistivity are different.

主权项

1. A method of depositing wires, comprising:
forming a plurality of first trenches in a surface of a dielectric layer; forming a plurality of first wires, wherein each of said first wires are formed in each of said first trenches and said first wires are formed of a first material having a first bulk resistivity; forming a plurality of second trenches in said surface of said dielectric layer; and forming a plurality of second wires, wherein each of said second wires are formed in each of said second trenches and said second wires are formed of a second material having a second bulk resistivity, wherein said first bulk resistivity and second bulk resistivity are different; wherein the method further comprises: applying a first hardmask on said dielectric layer prior to forming said plurality of first trenches in said dielectric layer and said plurality of first trenches is formed in said first hardmask and said dielectric layer; removing a portion of said first material from each of said first wires, forming a first recess in each of said plurality of first trenches; and applying a second hardmask into said first recesses prior to forming said plurality of second trenches in said dielectric layer, wherein said second trenches extend through said first hardmask.