发明名称 Support base-attached encapsulant, encapsulated substrate having semiconductor devices mounted thereon, encapsulated wafer having semiconductor devices formed thereon, semiconductor apparatus, and method for manufacturing semiconductor apparatus
摘要 Support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate or semiconductor device forming surface of a wafer, containing a support base having one fibrous film or a plurality of the fibrous films being laminated, the fibrous film subjected to surface treatment with an organosilicon compound, and a resin layer of thermosetting resin formed on one surface of the support base. The support base-attached encapsulant inhibit the substrate or wafer from warping and semiconductor devices from peeling away from the substrate, and collectively encapsulate the semiconductor device mounting surface of the substrate or the semiconductor device forming surface of the wafer even when a large-diameter wafer or large-area substrate is encapsulated. The support base-attached encapsulant has uniformity and homogeneity without opening or tangle of fiber, and is excellent in reliability such as heat resistance, electrical insulation property, moisture resistance, excellent in versatility, economical efficiency, and mass-productivity.
申请公布号 US9312197(B2) 申请公布日期 2016.04.12
申请号 US201514738342 申请日期 2015.06.12
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 Akiba Hideki;Nakamura Tomoaki;Yamaguchi Shinsuke;Shiobara Toshio
分类号 H01L23/29;B32B27/28;B32B27/38;B32B27/12;H01L21/56;H01L21/78;H01L23/31 主分类号 H01L23/29
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon or a semiconductor device forming surface of a wafer having semiconductor devices formed thereon, comprising a support base having one fibrous film or a plurality of the fibrous films being laminated, the fibrous film being subjected to surface treatment with an organosilicon compound, and a resin layer composed of a thermosetting resin formed on one surface of the support base.
地址 Tokyo JP