| 发明名称 | Semiconductor structures having low resistance paths throughout a wafer | ||
| 摘要 | A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path. | ||
| 申请公布号 | US9312140(B2) | 申请公布日期 | 2016.04.12 |
| 申请号 | US201414281166 | 申请日期 | 2014.05.19 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Gambino Jeffrey P.;Hartswick Thomas J.;He Zhong-Xiang;Stamper Anthony K.;White Eric J. |
| 分类号 | H01L21/768;H01L21/78;H01L21/288;H01L23/532;H01L23/58 | 主分类号 | H01L21/768 |
| 代理机构 | Roberts, Mlotkowski, Safran & Cole PC | 代理人 | Meyers Steven;Calderon Andrew M.;Roberts, Mlotkowski, Safran & Cole PC |
| 主权项 | 1. A method, comprising: forming at least one low resistance conduction path into an interlevel dielectric material and an underlying substrate of a wafer, within dicing channels of the wafer; forming a barrier layer in direct contact with the low resistance conductive path; and forming an electroplated seed layer in direct contact with the barrier layer. | ||
| 地址 | Armonk NY US | ||