| 发明名称 | Nonvolatile semiconductor memory device | ||
| 摘要 | A nonvolatile semiconductor memory device comprises a memory cell array including a plurality of memory cells, and a control circuit for the memory cell array. The control circuit is configured to perform a pre-read operation to read pre-selected memory cells before a read operation on target memory cells is performed and to change a read voltage to be applied to the target memory cells during the read operation based on a result of the pre-read operation. | ||
| 申请公布号 | US9311993(B2) | 申请公布日期 | 2016.04.12 |
| 申请号 | US201414474040 | 申请日期 | 2014.08.29 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Shimura Yasuhiro;Futatsuyama Takuya |
| 分类号 | G11C16/26;G11C11/56;G11C16/04 | 主分类号 | G11C16/26 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A nonvolatile semiconductor memory device comprising: a memory cell array including a plurality of memory cells; and a control circuit for the memory cell array, wherein the control circuit is configured to perform a pre-read operation to read pre-selected memory cells before a read operation on target memory cells is performed and to change a read voltage to be applied to the target memory cells during the read operation based on a result of the pre-read operation, and wherein the pre-selected memory cells include none or less than all of the target memory cells. | ||
| 地址 | Tokyo JP | ||