Bidirectional silicon carbide transient voltage supression devices

摘要

An electronic device includes a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface, and first and second silicon carbide Zener diodes on the silicon carbide layer. Each of the first and second silicon carbide Zener diodes may include a first heavily doped silicon carbide region having a second conductivity type opposite the first conductivity type on the silicon carbide layer, and an ohmic contact on the first heavily doped silicon carbide region.

主权项

1. An electronic device, comprising:
a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface; first and second silicon carbide Zener diodes on the silicon carbide layer, wherein each of the first and second silicon carbide Zener diodes comprises a heavily doped silicon carbide epitaxial layer having a second conductivity type opposite the first conductivity type, wherein each of the heavily doped epitaxial layers forms a Zener junction with the silicon carbide layer and wherein the silicon carbide layer provides a common reference for the first and second silicon carbide Zener diodes, first and second ohmic contacts, respectively, on the heavily doped silicon carbide epitaxial layers of the first and second silicon carbide Zener diodes opposite the silicon carbide layer; and a third ohmic contact on the silicon carbide layer, the third ohmic contact providing a reference contact on the silicon carbide layer for both the first and second silicon carbide Zener devices.